Description :

The IKP20N60T represents Infineon's fifth-generation TRENCHSTOP IGBT technology, which combines a trench gate field-stop structure with an emitter-controlled diode. This synergy results in significantly improved static and dynamic performance. The device features an exceptionally low collector-emitter saturation voltage (Vce(sat)) of 2.05V, minimizing conduction losses. Its low switching losses and gate charge, combined with a positive temperature coefficient for easy paralleling, make it a top-tier choice for designers of high-efficiency, high-reliability power systems. The IKP20N60T is offered in the industry-standard, through-hole TO-220 package.

 

Key Features :

• Advanced TRENCHSTOP™ IGBT Technology: Optimized for the best compromise between low conduction and low switching losses.

• Integrated Soft Recovery Diode: Features a fast, soft recovery anti-parallel diode to minimize turn-on losses and EMI.

• Low Saturation Voltage: Vce(sat) of 2.05V for reduced conduction losses.

• High Efficiency and Ruggedness: Designed for stable performance over temperature and high operational reliability.

• Easy Paralleling Capability: Positive temperature coefficient of Vce(sat) allows for safe current sharing in multi-device configurations.

• Low Gate Charge: Simplifies drive requirements and reduces drive losses.

Applications :

This IGBT is perfectly suited for a wide array of high-performance applications, including:

• Switch-Mode Power Supplies (SMPS)

• Power Factor Correction (PFC) stages

• Solar Inverters and Alternative Energy Systems

• Motor Drives and Industrial Controls

• Welding Equipment and UPS

Technical Specifications :