Products
  • FGL40N120AND IGBT Transistor - 1200V, 64A, NPT Technology | onsemi

The FGL40N120AND from onsemi is a high-performance NPT (Non-Punch Through) IGBT transistor designed for robust power switching applications. This device offers an optimal balance of low saturation voltage and fast switching characteristics. With a high voltage rating of 1200V and a continuous collector current of 64A, it is engineered for efficiency and reliability in demanding circuits such as motor drives and power inverters.
  • Description :

    The FGL40N120AND is a Single IGBT in a TO-264 package, providing high power handling capability up to 500W. Its advanced NPT technology ensures low switching losses and a tight parameter distribution, making it an excellent choice for high-efficiency designs. The device features a low Vce(on) of 3.2V, which contributes to reduced conduction losses, and specified switching energy values that allow for precise thermal and performance calculations. Although this part is marked as obsolete, its design represents a solid solution for industrial power systems requiring high current and voltage ratings.

     

    Key Features :

    • Advanced NPT IGBT Technology: Ensures low switching losses and high efficiency.

    • High Voltage and Current Rating: 1200V collector-emitter voltage and 64A continuous current.

    • Low Vce(on): 3.2V at 15V, 40A for reduced conduction losses.

    • Specified Switching Characteristics: Includes switching energy (Eon/Eoff) and gate charge for design accuracy.

    • High Power Handling: Maximum power dissipation of 500W.

    • Rugged Through-Hole Package: TO-264 package for superior thermal performance.




     

    Applications :

    This IGBT is well-suited for a range of high-power applications, including:

    • Motor Drives and Controls

    • Uninterruptible Power Supplies (UPS)

    • Industrial Inverters

    • Welding Equipment

    • Switch-Mode Power Supplies (SMPS)




     

    Technical Specifications :

     
     
    Parameter Specification
    Manufacturer onsemi
    Product Category IGBT Transistors
    IGBT Type NPT
    Package / Case TO-264-3
    Mounting Type Through Hole
    Configuration Single
    Collector-Emitter Voltage (V<sub>CES</sub>) 1200 V
    Continuous Collector Current (I<sub>C</sub>) 64 A
    Pulsed Collector Current (I<sub>CM</sub>) 160 A
    Vce(on) (Max) 3.2 V @ 15 V, 40 A
    Power - Max 500 W
    Input Type Standard
    Gate Charge 220 nC
    Switching Energy 2.3 mJ (on), 1.1 mJ (off)
    Reverse Recovery Time (t<sub>rr</sub>) 112 ns
    Operating Temperature (T<sub>J</sub>) -55 °C to +150 °C


     
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