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STD12N10L 100V N-Channel Power MOSFET - 15A, 0.114Ω - TO-252AA Package
The STD12N10L is a high-performance N-Channel Power MOSFET utilizing advanced TrenchFET technology. Designed for efficiency and robustness, this 100V, 15A MOSFET offers a low on-state resistance of 0.114Ω, making it an ideal choice for power management and switching applications. Housed in a TO-252AA (DPAK) package, it is optimized for surface mounting and provides excellent thermal performance for a wide range of commercial and industrial applications.
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Product Description :
The STD12N10L is a metal-oxide semiconductor field-effect transistor (MOSFET) engineered for high-speed switching and high-current handling. Its key characteristic is the very low Drain-Source On-State Resistance (RDS(on)), which minimizes conduction losses and improves overall system efficiency. The device is capable of operating at a high junction temperature of up to 175°C and is fully compliant with RoHS directives, making it suitable for modern, eco-conscious electronic designs.
Application :The STD12N10L is perfectly suited for a variety of power conversion and control circuits, including:
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Primary Side Switch in Switch-Mode Power Supplies (SMPS)
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DC-DC Converters
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Motor Control Drives
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Power Management in Computing and Automotive Systems
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High-Efficiency Switching Regulators
Technical Specification :
Category Parameter Symbol Test Conditions Min Typ Max Unit Voltage Ratings Drain-Source Voltage 100 V Gate-Source Voltage ±20 V Current Ratings Continuous Drain Current 15 A Pulsed Drain Current 40 A On-State Resistance Drain-Source On-Resistance 0.114 Ω Gate Characteristics Gate Threshold Voltage 1.0 2.5 V Total Gate Charge 24 41 nC Switching Characteristics Turn-On Delay Time 15 25 ns Rise Time 50 75 ns Turn-Off Delay Time 30 45 ns Fall Time 60 90 ns Diode Characteristics Body Diode Forward Voltage 0.9 1.5 V Thermal Junction-to-Ambient Thermal Resistance Steady State 40 50 °C/W Junction-to-Case Thermal Resistance 0.85 1.1 °C/W Package TO-252AA (DPAK)
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