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FQP8N60C N-Channel MOSFET – 600 V, 7.5 A, TO-220 | High-Efficiency Power Transistor
The FQP8N60C is a high-voltage, high-performance N-Channel Enhancement Mode Power MOSFET, developed using onsemi’s (formerly Fairchild) proprietary planar stripe and DMOS technology. Engineered for superior switching efficiency and low conduction loss, this device delivers reliable performance in demanding power electronics. Its TO-220 through-hole package makes it easy to integrate into various designs, while its robust construction ensures long service life even under harsh operating conditions.
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Product Description:
Experience unmatched power and efficiency with the FQP8N60C — a 600 V N-channel QFET® MOSFET designed for high-efficiency switched-mode power supplies (SMPS), active power factor correction (PFC), and electronic lighting ballasts. With low gate charge, low R<sub>DS(on)</sub>, and fast switching characteristics, the FQP8N60C minimizes switching and conduction losses, improving overall system reliability and thermal performance.
This MOSFET undergoes 100% avalanche testing to guarantee durability and resilience under transient conditions. Its advanced silicon technology allows it to handle 7.5 A continuous drain current and 147 W power dissipation, making it a dependable solution for power management and lighting applications. Whether you're designing for performance, longevity, or energy efficiency — the FQP8N60C stands out as a trusted choice for engineers and manufacturers worldwide.
Applications:
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Switched Mode Power Supplies (SMPS)
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Active Power Factor Correction (PFC) circuits
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Electronic lamp ballasts (half-bridge topology)
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Power management systems
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High-efficiency lighting solutions
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General-purpose high-voltage switching
Technical Specifications :
Parameter Value Manufacturer onsemi / Fairchild Part Number FQP8N60C Technology Si Channel Type / Polarity N-Channel Channel Mode Enhancement Series FQP8N60C Configuration Single Number of Channels 1 Drain-Source Breakdown Voltage (Vds) 600 V Continuous Drain Current (Id) 7.5 A Drain-Source On-State Resistance (Rds On) 1.0 – 1.2 Ω Gate-Source Voltage (Vgs) -30 V / +30 V Gate-Source Threshold Voltage (Vgs th) 4 V Gate Charge (Qg) 28 nC Forward Transconductance (Min) 8.7 S Rise Time 60.5 ns Fall Time 64.5 ns Power Dissipation (Pd) 147 W Minimum Operating Temperature -55 °C Maximum Operating Temperature +150 °C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Height 16.3 mm Length 10.67 mm Product Type MOSFET Key Features Low gate charge, 100% avalanche tested, low conduction & switching loss
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