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FGL40N120AND IGBT Transistor - 1200V, 64A, NPT Technology | onsemiDescription :
The FGL40N120AND is a Single IGBT in a TO-264 package, providing high power handling capability up to 500W. Its advanced NPT technology ensures low switching losses and a tight parameter distribution, making it an excellent choice for high-efficiency designs. The device features a low Vce(on) of 3.2V, which contributes to reduced conduction losses, and specified switching energy values that allow for precise thermal and performance calculations. Although this part is marked as obsolete, its design represents a solid solution for industrial power systems requiring high current and voltage ratings.
Key Features :
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Advanced NPT IGBT Technology: Ensures low switching losses and high efficiency.
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High Voltage and Current Rating: 1200V collector-emitter voltage and 64A continuous current.
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Low Vce(on): 3.2V at 15V, 40A for reduced conduction losses.
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Specified Switching Characteristics: Includes switching energy (Eon/Eoff) and gate charge for design accuracy.
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High Power Handling: Maximum power dissipation of 500W.
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Rugged Through-Hole Package: TO-264 package for superior thermal performance.
Applications :
This IGBT is well-suited for a range of high-power applications, including:
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Motor Drives and Controls
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Uninterruptible Power Supplies (UPS)
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Industrial Inverters
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Welding Equipment
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Switch-Mode Power Supplies (SMPS)
Technical Specifications :
Parameter Specification Manufacturer onsemi Product Category IGBT Transistors IGBT Type NPT Package / Case TO-264-3 Mounting Type Through Hole Configuration Single Collector-Emitter Voltage (V<sub>CES</sub>) 1200 V Continuous Collector Current (I<sub>C</sub>) 64 A Pulsed Collector Current (I<sub>CM</sub>) 160 A Vce(on) (Max) 3.2 V @ 15 V, 40 A Power - Max 500 W Input Type Standard Gate Charge 220 nC Switching Energy 2.3 mJ (on), 1.1 mJ (off) Reverse Recovery Time (t<sub>rr</sub>) 112 ns Operating Temperature (T<sub>J</sub>) -55 °C to +150 °C
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