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BUP314D IGBT Transistor - 1200V, 42A, TO-218 | Infineon Technologies
Description :
The BUP314D is a high-power IGBT transistor built on advanced silicon technology. It is engineered to handle significant power levels with a maximum power dissipation of 525W, making it suitable for demanding industrial environments. Its key advantage lies in its ability to switch high currents and voltages efficiently, which helps in reducing switching losses and improving overall system performance. The through-hole TO-218 package ensures easy mounting and provides excellent thermal characteristics for effective heat dissipation. Whether used in inverters, welding equipment, or motor drives, the BUP314D offers a reliable and powerful switching solution.
Key Features :
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High Voltage Capability: Collector-Emitter voltage (V<sub>CES</sub>) of 1200V for robust operation in high-power circuits.
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High Current Handling: Continuous collector current (I<sub>C</sub>) of 42A.
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Robust Power Dissipation: Capable of handling up to 525W.
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Fast Switching Speeds: Optimized for efficient operation in switching applications.
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Rugged Package: Housed in a TO-218 package for superior thermal performance and mechanical strength.
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Wide Operating Temperature Range: Can operate in harsh environments from -55°C to +150°C.
Applications :
The BUP314D is ideally suited for a wide range of high-power applications, including:
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Motor Drives and Controls
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Uninterruptible Power Supplies (UPS)
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Inverters and Welding Equipment
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Switch-Mode Power Supplies (SMPS)
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Industrial Automation Systems
Technical Specifications :
Parameter Specification Manufacturer Infineon Technologies Product Category IGBT Transistors Technology Si Package / Case TO-218-3 Mounting Style Through Hole Configuration Single Collector-Emitter Voltage (V<sub>CES</sub>) 1200 V Gate-Emitter Voltage (V<sub>GE</sub>) ±20 V Continuous Collector Current (I<sub>C</sub>) 42 A Power Dissipation (P<sub>D</sub>) 525 W Operating Temperature Range -55 °C to +150 °C Packaging Tube Height 12.5 mm Length 15 mm Width 4.9 mm
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