• BC337-40 NPN Bipolar Transistor - 45V 0.8A TO-92 | Diotec Semiconductor

    Description :

    The BC337-40 is a versatile NPN transistor capable of handling collector-emitter voltages up to 45V and continuous collector currents up to 800mA. Its primary advantage lies in its high current gain, which ensures strong signal amplification with minimal input current. With a transition frequency of 100MHz, it is also suitable for a range of RF and audio applications. The device is housed in a through-hole TO-92 package, ideal for prototyping and applications where easy manual assembly is required. As an active component from a reputable manufacturer, the BC337-40 offers reliable performance for a vast array of electronic designs.


     

    Features :

    • High Current Gain: Guaranteed minimum hFE of 250 (@100mA, 1V), providing excellent amplification.

    • Medium Power Handling: Supports collector currents up to 800mA, suitable for driving relays, LEDs, and small motors.

    • High Transition Frequency: 100MHz ft enables use in audio and RF amplification stages.

    • Low Saturation Voltage: VCE(sat) of only 700mV (@500mA) ensures efficient switching and minimal power loss.

    • Standard TO-92 Package: The common through-hole package allows for easy circuit board prototyping and assembly.


    Applications :

    The BC337-40 is a fundamental building block in electronics, commonly used in:

    • Low-Power Audio Amplification and Preamplifiers

    • Signal Switching and Interface Circuits

    • LED Driver Stages

    • Relay and Solenoid Drivers

    • Linear Voltage Regulators

    • General Purpose Amplification and Switching

    • Hobbyist and Educational Projects (e.g., Arduino, Raspberry Pi add-ons)





     

    Technical Specifications :

     
     
     
      Parameter Specification Notes
      Manufacturer Diotec Semiconductor  
      Part Number BC337-40  
      Category Discrete Semiconductor Products / Transistors / BJTs / Single  
      Status Active  
      Transistor Type NPN Bipolar Junction Transistor (BJT)
      Collector-Emitter Voltage (Vceo) 45 V  
      Collector-Base Voltage (Vcbo) 50 V  
      Emitter-Base Voltage (Vebo) 5 V  
      Continuous Collector Current (Ic) 800 mA  
      Collector Cutoff Current 100 nA (max)  
      DC Current Gain (hFE) 250 (min) @ Ic = 100mA, Vce = 1V
      Collector-Emitter Saturation Voltage (Vce(sat)) 700 mV (max) @ Ic = 500mA, Ib = 50mA
      Power Dissipation (Pd) 625 mW  
      Transition Frequency (fT) 100 MHz  
      Operating Junction Temperature (Tj) -55°C to +150°C  
      Mounting Type Through Hole  
      Package / Case TO-92 (TO-226AA)
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