Products
  • IRFP064 N-Channel Power MOSFET - 55V 110A TO-247 | Vishay Siliconix

    Description :

    The IRFP064 is a powerful N-Channel MOSFET that combines a high continuous drain current rating of 110A with a drain-source voltage (Vdss) of 55V. Its key to efficiency lies in its exceptionally low on-resistance (Rds(on)), typically 9mΩ, which minimizes conduction losses and heat generation during operation. While this part is marked as obsolete, it remains a popular and proven choice in the aftermarket and for existing designs requiring a reliable, high-power switching solution. Housed in a through-hole TO-247 package, it is built for easy integration and superior thermal performance in power-dense environments.


     

    Features :

    • High Power Handling: Continuous drain current (Id) of 110A makes it suitable for very high-power circuits.

    • Low On-Resistance: Ultra-low Rds(on) of just 9mΩ @ 10V gate drive maximizes efficiency and reduces power loss.

    • Fast Switching Performance: Designed for efficient operation at high switching frequencies.

    • Rugged TO-247 Package: The through-hole package offers a high power dissipation rating of 300W and excellent mechanical durability.

    • High Drive Capability: Compatible with standard 10V-12V gate driver circuits.




     

    Applications :

    The IRFP064 is versatile and can be used in a wide range of high-power applications, including:

    • Switch-Mode Power Supplies (SMPS)

    • DC-DC Converters

    • Motor Drive and Control Circuits

    • High-Power Audio Amplifiers

    • Linear Power Supplies (as a pass element)

    • Inverters and UPS Systems

    • Automotive and Industrial Control Systems





    Technical Specifications :
     
      Parameter Specification Notes
      Manufacturer Vishay Siliconix  
      Part Number IRFP064  
      Category Discrete Semiconductor Products / Transistors / MOSFETs / Single  
      Status Obsolete  
      FET Type N-Channel Enhancement Mode
      Technology MOSFET (Metal Oxide)  
      Drain-Source Voltage (Vdss) 55 V - 60 V  
      Continuous Drain Current (Id) 110 A @ Tc = 25°C
      Max. Gate-Source Voltage (Vgs) ±20 V  
      Gate Threshold Voltage (Vgs(th)) 4 V (max) @ Id = 250µA
      Drain-Source On-Resistance (Rds(on)) 9 mΩ (max) @ Id = 78A, Vgs = 10V
      Total Gate Charge (Qg) 190 nC (max) @ Vgs = 10 V
      Input Capacitance (Ciss) 7400 pF (max) @ Vds = 25 V
      Power Dissipation (Pd) 300 W (max) @ Tc = 25°C
      Operating Junction Temperature (Tj) -55°C to +175°C  
      Mounting Type Through Hole  
      Package / Case TO-247-3 (TO-247AC)  
Shenzhen Diying Technology Co.Ltd
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Email: sales@diyingtech.com
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