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IRFP064 N-Channel Power MOSFET - 55V 110A TO-247 | Vishay Siliconix
Description :
The IRFP064 is a powerful N-Channel MOSFET that combines a high continuous drain current rating of 110A with a drain-source voltage (Vdss) of 55V. Its key to efficiency lies in its exceptionally low on-resistance (Rds(on)), typically 9mΩ, which minimizes conduction losses and heat generation during operation. While this part is marked as obsolete, it remains a popular and proven choice in the aftermarket and for existing designs requiring a reliable, high-power switching solution. Housed in a through-hole TO-247 package, it is built for easy integration and superior thermal performance in power-dense environments.
Features :
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High Power Handling: Continuous drain current (Id) of 110A makes it suitable for very high-power circuits.
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Low On-Resistance: Ultra-low Rds(on) of just 9mΩ @ 10V gate drive maximizes efficiency and reduces power loss.
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Fast Switching Performance: Designed for efficient operation at high switching frequencies.
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Rugged TO-247 Package: The through-hole package offers a high power dissipation rating of 300W and excellent mechanical durability.
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High Drive Capability: Compatible with standard 10V-12V gate driver circuits.
Applications :
The IRFP064 is versatile and can be used in a wide range of high-power applications, including:
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Switch-Mode Power Supplies (SMPS)
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DC-DC Converters
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Motor Drive and Control Circuits
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High-Power Audio Amplifiers
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Linear Power Supplies (as a pass element)
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Inverters and UPS Systems
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Automotive and Industrial Control Systems
Technical Specifications :
Parameter Specification Notes Manufacturer Vishay Siliconix Part Number IRFP064 Category Discrete Semiconductor Products / Transistors / MOSFETs / Single Status Obsolete FET Type N-Channel Enhancement Mode Technology MOSFET (Metal Oxide) Drain-Source Voltage (Vdss) 55 V - 60 V Continuous Drain Current (Id) 110 A @ Tc = 25°C Max. Gate-Source Voltage (Vgs) ±20 V Gate Threshold Voltage (Vgs(th)) 4 V (max) @ Id = 250µA Drain-Source On-Resistance (Rds(on)) 9 mΩ (max) @ Id = 78A, Vgs = 10V Total Gate Charge (Qg) 190 nC (max) @ Vgs = 10 V Input Capacitance (Ciss) 7400 pF (max) @ Vds = 25 V Power Dissipation (Pd) 300 W (max) @ Tc = 25°C Operating Junction Temperature (Tj) -55°C to +175°C Mounting Type Through Hole Package / Case TO-247-3 (TO-247AC) -