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IRF540NPBF N-Channel Power MOSFET 100V 33A TO-220AB | High-Speed Switching by InfineonProduct Description:
The IRF540NPBF is a robust N-channel MOSFET that offers 100 V drain-source voltage and supports continuous drain currents up to 33 A. With a maximum on-resistance of just 44 mΩ and a total gate charge of 71 nC, it ensures fast and efficient switching performance, reducing energy loss in demanding applications.Housed in a TO-220AB through-hole package, this transistor provides excellent thermal performance and mechanical stability. Its high junction temperature tolerance of up to 175 °C makes it suitable for both consumer and industrial applications that require long-term reliability and high power density.
Key highlights:
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Low R<sub>DS(on)</sub> for reduced conduction losses
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Fast switching characteristics
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High drain current capability
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Pb-free and RoHS compliant design
Applications:
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Switched-mode power supplies (SMPS)
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Motor control and driver circuits
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DC–DC converters
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Inverters and UPS systems
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Industrial power switching equipment
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Consumer electronics requiring efficient power management
Technical Specifications:
Parameter Symbol Value Unit Manufacturer – Infineon Technologies – Series – HEXFET – MOSFET Type – N-Channel – Drain-Source Voltage VDSS 100 V Continuous Drain Current (Tc = 25 °C) ID 33 A Gate-Source Voltage VGS ±20 V Drain-Source On-Resistance RDS(on) 44 @ ID=16A, VGS=10V mΩ Gate Threshold Voltage VGS(th) Max 4 @ ID=250 µA V Gate Charge Qg 71 @ VGS=10V nC Input Capacitance Ciss 1960 @ VDS=25V pF Power Dissipation PD 130 W Operating Junction Temperature Tj -55 to +175 °C Package / Case – TO-220-3 / TO-220AB – Mounting Style – Through Hole – Technology – MOSFET (Metal Oxide) – Packaging – Tube – Configuration – Single –
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