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NCE8580 N-Channel Enhancement Mode Power MOSFET | High-Efficiency Switching, TO-220-3L PackageProduct Description:
The NCE8580 MOSFET from NCE Power Semiconductor is engineered for high-speed switching and low conduction loss. With its TO-220-3L package, it ensures easy mounting and excellent heat dissipation. The device offers robust performance with low gate charge and low R<sub>DS(on)</sub>, enabling efficient energy conversion in a wide range of industrial and consumer electronic systems.
Key features :
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Low on-resistance for minimal power loss
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High current handling capability
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Fast switching speed for high-efficiency power conversion
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Pb-free, RoHS compliant design
Applications:
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Switching power supplies
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DC-DC converters
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Motor drives and control circuits
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Inverters and UPS systems
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Consumer and industrial power equipment
Technical Specifications :
Parameter Symbol Value Unit Drain-Source Voltage VDSS 100 V Continuous Drain Current ID 85 A Pulsed Drain Current IDM 340 A Gate-Source Voltage VGSS ±20 V Total Power Dissipation PD 208 W Junction & Storage Temperature Range Tj, Tstg -55 to +150 °C Drain-Source On-Resistance RDS(on) 6.8 (typ.) @ VGS=10V mΩ Gate Threshold Voltage VGS(th) 2.0–4.0 V Input Capacitance Ciss 6800 pF Output Capacitance Coss 1440 pF Reverse Transfer Capacitance Crss 360 pF Turn-On Delay Time td(on) 28 ns Turn-Off Delay Time td(off) 89 ns Rise Time tr 55 ns Fall Time tf 56 ns Package – TO-220-3L – Mounting Style – Through Hole –
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