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FQP8N60C N-Channel MOSFET – 600 V, 7.5 A, TO-220 | High-Efficiency Power TransistorProduct Description:
Experience unmatched power and efficiency with the FQP8N60C — a 600 V N-channel QFET® MOSFET designed for high-efficiency switched-mode power supplies (SMPS), active power factor correction (PFC), and electronic lighting ballasts. With low gate charge, low R<sub>DS(on)</sub>, and fast switching characteristics, the FQP8N60C minimizes switching and conduction losses, improving overall system reliability and thermal performance.
This MOSFET undergoes 100% avalanche testing to guarantee durability and resilience under transient conditions. Its advanced silicon technology allows it to handle 7.5 A continuous drain current and 147 W power dissipation, making it a dependable solution for power management and lighting applications. Whether you're designing for performance, longevity, or energy efficiency — the FQP8N60C stands out as a trusted choice for engineers and manufacturers worldwide.
Applications:
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Switched Mode Power Supplies (SMPS)
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Active Power Factor Correction (PFC) circuits
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Electronic lamp ballasts (half-bridge topology)
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Power management systems
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High-efficiency lighting solutions
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General-purpose high-voltage switching
Technical Specifications :
Parameter Value Manufacturer onsemi / Fairchild Part Number FQP8N60C Technology Si Channel Type / Polarity N-Channel Channel Mode Enhancement Series FQP8N60C Configuration Single Number of Channels 1 Drain-Source Breakdown Voltage (Vds) 600 V Continuous Drain Current (Id) 7.5 A Drain-Source On-State Resistance (Rds On) 1.0 – 1.2 Ω Gate-Source Voltage (Vgs) -30 V / +30 V Gate-Source Threshold Voltage (Vgs th) 4 V Gate Charge (Qg) 28 nC Forward Transconductance (Min) 8.7 S Rise Time 60.5 ns Fall Time 64.5 ns Power Dissipation (Pd) 147 W Minimum Operating Temperature -55 °C Maximum Operating Temperature +150 °C Mounting Style Through Hole Package / Case TO-220-3 Packaging Tube Height 16.3 mm Length 10.67 mm Product Type MOSFET Key Features Low gate charge, 100% avalanche tested, low conduction & switching loss
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